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V12WM100C-M3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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V12WM100C-M3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page V12WM100C-M3 www.vishay.com Vishay General Semiconductor Revision: 04-Dec-13 2 Document Number: 89973 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 3 A TA = 25 °C VF (1) 0.56 - V IF = 6 A 0.65 0.75 IF = 3 A TA = 125 °C 0.48 - IF = 6 A 0.57 0.66 Reverse current per diode VR = 100 V TA = 25 °C IR (2) - 300 μA TA = 125 °C 3 15 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V12WM100C UNIT Typical thermal resistance per diode RJC 2.4 °C/W per device 1.2 per device RJA (1) (2) 65 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V12WM100C-M3/I 0.38 I 2500/reel 13" diameter plastic tape and reel 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 Case Temperature ( °C) RthJA=RthJC=1.2oC/W RthJA=65oC/W 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = tp/T T tp |
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