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MACHLV210-12 Datasheet(PDF) 21 Page - Lattice Semiconductor |
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MACHLV210-12 Datasheet(HTML) 21 Page - Lattice Semiconductor |
21 / 29 page 21 MACHLV210-12/15/20 ENDURANCE CHARACTERISTICS The MACHLV210 is manufactured using our ad- vanced Electrically Erasable process. This technology uses an EE cell to replace the fuse link used in bipolar parts. As a result, the device can be erased and reprogrammed, a feature which allows 100% testing at the factory. Parameter Symbol Parameter Description Test Conditions Min Unit Max Storage 10 Years Temperature Max Operating 20 Years Temperature N Max Reprogramming Cycles Normal Programming 100 Cycles Conditions tDR Min Pattern Data Retention Time INPUT/OUTPUT EQUIVALENT SCHEMATICS Program/Verify Circuitry Input Output Preload Circuitry 17908D-9 ESD Protection Feedback Input VCC VCC >50 k Ω >50 k Ω |
Similar Part No. - MACHLV210-12 |
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Similar Description - MACHLV210-12 |
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