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LTC5535 Datasheet(PDF) 9 Page - Linear Technology |
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LTC5535 Datasheet(HTML) 9 Page - Linear Technology |
9 / 12 page LTC5535 9 5535f APPLICATIO S I FOR ATIO Operation The LTC5535 RF detector integrates several functions to provide RF power detection over frequencies ranging from 600MHz to 7GHz. These functions include an internal frequency compensated output amplifier, an RF Schottky diode peak detector and a level shift amplifier to convert the RF input signal to DC. The LTC5535 has both gain setting and voltage offset adjustment capabilities. Output Amplifier The output amplifier is capable of supplying typically 20mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the gain of this amplifier. Gain = 1 + RA/RB The amplifier is not unity gain stable; a minimum gain of two is required. The output amplifier has a bandwidth of 20MHz with a gain of 2. For increased gain applications, the bandwidth is reduced according to the formula: Bandwidth = 40MHz/(Gain) = 40MHz • RB/(RA + RB) For stable operation the gain setting resistors should be low values and the board capacitance on VM should be minimized. RB is recommended to be no greater than 500Ω for all gain settings. The VOS input controls the DC input voltage to the output amplifier. VOS must be connected to ground if the DC output voltage is not to be changed. The output amplifier is initially trimmed to 200mV (Gain = 2) with VOS con- nected to ground. The VOS pin is used to change the initial VOUT starting voltage. This function, in combination with gain adjust- ment enables the LTC5535 output to span the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 200mV. The starting voltage at VOUT for VOS >200mV is: VOUT = 0.5 • VOS • Gain where gain is the output amplifier gain. For a gain of 2, VOUT will exactly track VOS above 200mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 50µA and drives a 5pF internal peak detector capacitor. RFIN GND VOS VCC VOUT VM LTC5535ES6 1 2 3 6 5 4 C4 39pF RFIN R1 (OPT) OFFSET ADJUSTMENT C2 100pF C1 0.1µF RLOAD (OPT) VCC 2.7V TO 5.5V VOUT GND R2 500Ω 1% R3 500Ω 1% 5535 DB Demo Board Schematic |
Similar Part No. - LTC5535_15 |
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Similar Description - LTC5535_15 |
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