LTC4362-1/LTC4362-2

3

436212fa

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: All currents into device pins are positive; all currents out of device

pins are negative. All voltages are referenced to GND unless otherwise

specified.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Supplies

Input Voltage Range

l

2.5

28

V

Input Undervoltage Lockout

l

1.8

2.1

2.45

V

Input Supply Current

l

l

220

1.5

400

10

μA

μA

Thresholds

IN Pin Overvoltage Threshold

l

5.684

5.8

5.916

V

Overvoltage Hysteresis

l

25

100

200

mV

Input Pins

ON Input Threshold

l

0.4

1.5

V

ON Pull-Down Current

l

2.5

5

10

μA

Output Pins

OUT Turn-On Ramp-Rate

l

1.5

3

4.5

V/ms

OUT Leakage Current

l

0±3

μA

IN to GATEP Clamp Voltage

l

5

5.8

7.5

V

GATEP Pull-Down Resistance

l

0.8

2

3.2

MΩ

PWRGD Output Low Voltage

l

0.23

0.4

V

PWRGD Pull-Up Resistance to OUT

l

250

500

800

kΩ

Internal N-Channel MOSFET

On Resistance

l

40

70

mΩ

Overcurrent Threshold

l

1.2

1.5

1.8

A

Peak Avalanche Current

L = 0.1mH (Note 5)

10

A

Single Pulse Avalanche Energy

10

mJ

Delay

Turn-On Delay

l

50

130

200

ms

Turn-Off Delay for Overvoltage

l

0.45

1

μs

Turn-Off Delay for Overcurrent

l

510

20

μs

PWRGD Rising Delay

6.5V to PWRGD High

l

0.3

1

μs

PWRGD Falling Delay

l

25

65

100

ms

ON High to N-channel MOSFET Off

2.5V

l

40

100

μs

ESD Protection

ESD Protection for IN to GND

±25

kV

The

Note 3: The minimum drain-source breakdown voltage of the internal

MOSFET is 28V. Driving the IN and SENSE pins more than 28V above OUT

Note 4: An internal current sense resistor ties IN and SENSE. Driving

SENSE relative to IN may damage the resistor.

are not production tested.