SS2H9, SS2H10

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Vishay General Semiconductor

Revision: 16-Jan-14

1

Document Number: 88750

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Voltage Surface Mount Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Low profile package

• Guardring for overvoltage protection

• Ideal for automated placement

• Low power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For

use

in

low

voltage

high

frequency

inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: DO-214AA (SMB)



Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade



Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

2.0 A

90 V, 100 V

75 A

0.65 V

10 μA

175 °C

Package

DO-214AA

Diode variations

Single

DO-214AA (SMB)

PARAMETER

SYMBOL

SS2H9

SS2H10

UNIT

Device marking code

MS9

MS10

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

2.0

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

75

A

1.0

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-65 to +175

°C