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BAT85S Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAT85S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAT85S www.vishay.com Vishay Semiconductors Rev. 1.8, 06-May-13 1 Document Number: 85513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diode MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Applications where a very low forward voltage is required PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAT85S BAT85S-TR or BAT85S-TAP Single diode BAT85S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 30 V Peak forward surge current tp 10 ms IFSM 5A Repetitive peak forward current tp < 1 s IFRM 300 mA Forward continuous current IF 200 mA Average forward current PCB mounting, I = 4 mm; VRWM = 25 V, Tamb = 50 °C IFAV 200 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 0.1 mA VF 240 mV IF = 1 mA VF 320 mV IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV Reserve current VR = 25 V IR 2μA Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reserve recovery time IF = 10 mA to IR = 10 mA to iR = 1 mA trr 5ns |
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