KTX401U datasheet(2/2 Pages) KEC

Part #	KTX401U

Description	EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2002. 1. 24

2/2

KTX401U

Revision No : 3

Note) hFE Classification Y(4):120~240, GR:200~400.

ELECTRICAL CHARACTERISTICS (Ta=25 )

TRANSISTOR Q1

DIODE D1

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=60V, IE=0

-

0.1

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

0.1

DC Current Gain

hFE (Note)

VCE=6V, IC=2

120

-

400

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=100 , IB=10

-

0.1

0.25

V

Transition Frequency

fT

VCE=10V, IC=1

80

-

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1

-

2.0

3.5

Noise Figure

NF

VCE=6V, IC=0.1 , f=1 , Rg=10

-

1.0

10

dB

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

VF(1)

IF=1mA

-

0.60

-

V

VF(2)

IF=10mA

-

0.72

-

VF(3)

IF=100mA

-

0.90

1.20

Reverse Current

IR

VR=80V

-

0.5

Total Capacitance

CT

VR=0, f=1

-

0.9

3.0

Reverse Recovery Time

trr

IF=10

-

1.6

4.0

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