SS10PH9, SS10PH10

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Vishay General Semiconductor

Revision: 06-Nov-13

3

Document Number: 89000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

10

12

8

6

4

2

0

25

50

75

100

125

150

175

Lead Temperature (°C)

Resistive or Inductive Load

T

at the Cathode Band Terminal

0

1.5

3.0

4.5

6.0

7.5

9.0

0

1

2

3

4

5

6

7

8

9

10

11

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

D = t

t

p

T

0.01

0.1

1

10

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Instantaneous Forward Voltage (V)

T

T

T

T

0.00001

0.0001

0.001

0.01

0.1

1

10

10

20

30

40

50

60

70

80

90

100

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

10

100

1000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

Junction to Ambient

0.01

0.1

1

10

100

1

10

100

t - Pulse Duration (s)