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SS3H9 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SS3H9
Description  High Voltage Surface Mount Schottky Rectifier
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS3H9 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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SS3H9, SS3H10
www.vishay.com
Vishay General Semiconductor
Revision: 28-Apr-14
1
Document Number: 88752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-E3
-
RoHS-compliant,
commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
90 V, 100 V
IFSM
100 A
VF
0.65 V
IR
20 μA
TJ max.
175 °C
Package
DO-214AB
Diode variations
Single
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
SS3H10
UNIT
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at: TL = 115 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C


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