LESHAN RADIO COMPANY, LTD.

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1

3

2

LMUN5211DW1T1G

Series

SC-88/SOT-363

6

4

5

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

1

3

2

6

4

5

7X

MARKING DIAGRAM

13

2

6

4

5

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

7X = Device Marking

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

Rating

Symbol Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1.)

mW

Derate above 25°C

mW/°C

Thermal Resistance –

670 (Note 1.)

°C/W

Junction-to-Ambient

490 (Note 2.)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25°C

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

mW

mW/°C

Thermal Resistance –

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

°C/W

Thermal Resistance –

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• We declare that the material of product compliance with RoHS requirements.