Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

Volts

Forward Power Dissipation

@ TA = 25°C

Derate above 25

°C

PD

225

2.0

mW

mW/

°C

Forward Current (DC)

IF

200 Max

mA

Junction Temperature

TJ

125 Max

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 µA)

V(BR)R

30

—

—

Volts

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

CT

—

—

10

pF

Reverse Leakage (VR = 25 V)

IR

—

0.5

2.0

µAdc

Forward Voltage (IF = 0.1 mAdc)

VF

—

0.22

0.24

Vdc

Forward Voltage (IF = 30 mAdc)

VF

—

0.41

0.5

Vdc

Forward Voltage (IF = 100 mAdc)

VF

—

0.52

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

trr

—

—

5.0

ns

Forward Voltage (IF = 1.0 mAdc)

VF

—

0.29

0.32

Vdc

Forward Voltage (IF = 10 mAdc)

VF

—

0.35

0.40

Vdc

Forward Current (DC)

IF

—

—

200

mAdc

Repetitive Peak Forward Current

IFRM

—

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

IFSM

—

—

600

mAdc

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc

•

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

3000/Tape&Reel

10000/Tape&Reel

LESHAN RADIO COMPANY, LTD.

We declare that the material of product

compliance with RoHS requirements.

S-LBAT54DW1T1G

1

3

2

SC-88/SOT-363

6

4

5

SURFACE MOUNT SCHOTTKY

BARRIER DIODE ARRAY

Rev.B 1/3

LBAT54DW1T1G

LBAT54DW1T3G

SV3

SV3

LBAT54DW1T1G

S-LBAT54DW1T1G

S-LBAT54DW1T3G

• S - Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.