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DFM600FXS12-A000 Datasheet(PDF) 2 Page - Dynex Semiconductor

Part # DFM600FXS12-A000
Description  Fast Recovery Diode Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DFM600FXS12-A000 Datasheet(HTML) 2 Page - Dynex Semiconductor

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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VRRM
Repetitive peak reverse voltage
Tj = 125°C
1200
V
IF
Forward current (per arm)
DC, Tcase = 75°C, Tj = 125°C
600
A
IFM
Max. forward current
Tcase = 110°C, tp = 1ms
1200
A
I
2t
I
2t value fuse current rating
VR = 0, tp = 10ms, Tj = 125°C
100
kA
2s
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 125°C
2500
W
Visol
Isolation voltage
– per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
2500
V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Al2O3
Baseplate material:
Cu
Creepage distance:
20mm
Clearance:
10mm
CTI (Comparative Tracking Index):
350
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
Rth(j-c)
Thermal resistance (per arm)
Continuous dissipation
junction to case
-
-
40
°C/kW
Rth(c-h)
Thermal resistance
case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
-
-
8
°C/kW
Tj
Junction temperature
-
-
125
°C
Tstg
Storage temperature range
-40
-
125
°C
Screw Torque
Mounting
– M6
-
-
5
Nm
Electrical connections
– M8
-
-
10
Nm


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