KTC1804D datasheet(2/4 Pages) KEC

Part #	KTC1804D

Description	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 4 page

2003. 3. 27

2/4

KTC1804D/L

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : hFE Classification O:100~200, Y:140~280, GR:200~400.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=40V, IE=0

-

1

A

Emitter Cut-off Current

IEBO

VEB=4V, IC=0

-

1

A

DC Current Gain

hFE (1) (Note)

VCE=2V, IC=0.5A

100

-

400

hFE (2)

VCE=2V, IC=6A

35

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=4A, IB=0.2A

-

200

400

mV

Base-Emitter Saturation Voltage

VBE(sat)

IC=4A, IB=0.2A

-

0.95

1.3

mV

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10 A, IE=0

60

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=

50

V

Emitter-base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

6

-

V

Gain-Bandwidth Product

fT

VCE=5V, IC=1A

-

180

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

65

-

pF

Switching

Time

Turn On Time

ton

IB1

B1

I

CC

V =25V

IB2

20µsec

I =-I =0.4A

1%

B1

B2

OUTPUT

DUTY CYCLE

INPUT

<=

-

50

-

nS

Storage Time

tstg

-

500

-

Fall Time

tf

-

20

-

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