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DG808BC45 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DG808BC45 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 12 page  SEMICONDUCTOR DG808BC45 7/12 www.dynexsemi.com 0 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 On-state current IT - (A) CS = 4uF CS = 3 uF CS = 2.5 uF CS = 2 uF Conditions : Tj = 125 oC VDM = VDRM dIGQ/dt = 40 A/us 0 5 10 15 20 25 30 0 1000 2000 3000 4000 On-state current IT - (A) Tj = 125 oC Tj = 25 oC Conditions : Cs = 4 uF dIGQ/dt = 40 A/us Fig.14 Turn-off energy vs on-state current Fig.15 Gate storage time vs on-state current 15 20 25 30 35 40 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us) Tj = 125 oC Tj = 25 oC Conditions: IT = 3000A Cs = 4.0uF 0 0.5 1 1.5 2 2.5 0 1000 2000 3000 4000 On-state current IT - (A) Tj = 125 oC Tj = 25 oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS Fig.16 Gate storage time vs rate of rise of reverse gate current Fig.17 Gate fall time vs on-state current |
Similar Part No. - DG808BC45_15 |
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Similar Description - DG808BC45_15 |
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