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DFM1200NXM33-A000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DFM1200NXM33-A000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 6 page  DFM1200NXM33-A000 3/6 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units IRM Peak reverse current VR = 3300V, Tj = 125°C 90 mA VF Forward voltage IF = 1200A 2.5 V IF = 1200A, Tj = 125°C 2.5 V LM Inductance - 25 nH DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units Qrr Reverse recovery charge IF = 1200A VR = 1800V dIF/dt = 5600A/μs 650 μC Irr Peak reverse recovery current 1000 A Erec Reverse recovery energy 750 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units Qrr Reverse recovery charge IF = 1200A VR = 1800V dIF/dt = 4500A/μs 1000 μC Irr Peak reverse recovery current 1050 A Erec Reverse recovery energy 1250 mJ |
Similar Part No. - DFM1200NXM33-A000_15 |
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Similar Description - DFM1200NXM33-A000_15 |
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