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DCR4590B24 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR4590B24 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 10 page  SEMICONDUCTOR DCR4590B228 7/10 www.dynexsemi.com Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current Fig.12 Stored charge Fig.13 Reverse recovery current 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Conditions: Tj = 125oC, V Rpeak ~1700V V RM ~ 1100V snubber as appropriate to control reverse voltages Q S max = 2027.7*(di/dt)0.5535 Q S min = 544.37*(di/dt)0.7194 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Conditions: Tj = 125oC, V Rpeak ~1700V V RM ~ 1100V snubber as appropriate to control reverse voltages I RRmax = 35.174*(di/dt)0.8262 I RRmin= 21.837*(di/dt)0.8933 |
Similar Part No. - DCR4590B24 |
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Similar Description - DCR4590B24 |
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