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DCR3640W48 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR3640W48 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page SEMICONDUCTOR DCR3640W52 7/10 www.dynexsemi.com Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 0 5,000 10,000 15,000 20,000 25,000 30,000 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) QSmin = 2698*(di/dt) 0.5396 QSmax = 6325*(di/dt) 0.4506 Co nditio ns: Tj=125 oC, VRpeak ~3100V, VRM ~ 2100V. Snubber as appro priate to co ntro l reverse vo tlages 0 100 200 300 400 500 600 0 5 10 15 20 25 Rate of decay of on-state current- di/dt - (A/us) IRRmin = 44.744*(di/dt) 0.7539 IRRmax = 69.492*(di/dt) 0.7014 Conditions: Tj = 125°C, VRpeak ~ 3100V, VRM ~ 2100V snubber as appropriate to control reverse voltages. Fig.12 Stored Charge Fig.13 Reverse recovery current |
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