3

COLLECTOR

2

EMITTER

1

BASE

R1

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

L6

10

3000/Tape & Reel

LESHAN RADIO COMPANY, LTD.

1/3

10000/Tape & Reel

We declare that the material of product compliance with

RoHS requirements.

LDTA114WET1G

.

LDTA114WET1G

LDTA114WET3G

4.7

L6

R2

Applications

Inverter, Interface, Driver

Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors.

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input,

and parasitic effects are almost completely eliminated.

3) Only the on / off conditions need to be set for operation,

making the device design easy.

4) Higher mounting densities can be achieved.

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Tj

Tstg

Limits

−50

−30 to +10

−100

−100

200

150

−55 to +150

Unit

V

V

mA

mW

°C

°C

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

10

4.7

External characteristics (Unit: mm)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

−

−

−

−

24

−

7

−

−0.1

−

−

−

250

10

−0.8

−0.3

−0.88

−0.5

−

−

13

V

V

mA

µA

−

MHz

k

Ω

−3

−−

= −5V

∗

−

0.37

0.47

0.57

−−

Input voltage

Output voltage

Input current

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

1

2

3

SC-89