Electronic Components Datasheet Search |
|
XP1027-BD Datasheet(PDF) 9 Page - M/A-COM Technology Solutions, Inc. |
|
XP1027-BD Datasheet(HTML) 9 Page - M/A-COM Technology Solutions, Inc. |
9 / 10 page Power Amplifier 27 - 31 GHz Rev. V2 XP1027-BD 9 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport 9 App Note [1] Biasing - It is recommended to separately bias each amplifier stage VD1 through VD3 at VD (1,2,3) = 5 V with ID1 = 240 mA, ID2 = 630 mA and ID3 = 1240 mA. Separate biasing is recommended if the amplifier is to be used in a linear application or at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current ID (total) = 2110 mA. Linear Applications - For applications where the amplifier is being used in linear operation, where best IM3 (Third-Order Intermod) performance is required at more than 5 dB below P1dB, it is recommended to use active gate biasing to keep the drain currents constant as the RF power and temperature vary; this gives the best performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature. Saturated Applications - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for drain current growth under this condition to achieve best RF output power and power added efficiency. If the input RF power level will vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes significant. Under this bias condition, gain will then vary with RF drive NOTE - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance. CAUTION - Make sure to properly sequence the applied voltages to ensure negative gate bias (VG1,2,3) is available before applying the positive drain supply (VD1,2,3). It is recommended that the device gates are protected with silicon diodes to limit the applied voltage. Bias Arrangement Layout for reference only – It is recommended to bias output stage from both sides. RFIN RFOUT 14 13 12 11 10 9 8 1 2 4 3 5 7 6 |
Similar Part No. - XP1027-BD_15 |
|
Similar Description - XP1027-BD_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |