L2SC5658QM3T5G

SOT –723

LESHAN RADIO COMPANY, LTD.

1/5

L2SC5658RM3T5G

ORDERING INFORMATION

SOT−723

MARKING

DIAGRAM

1

2

3

XXM

XX = Specific Device Code

(

QM = L2SC5658QM3T5G

RM = L2SC5658RM3T5G)

M

= Date Code

COLLECTOR

3

1

BASE

2

EMITTER

NPN Silicon General

Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier

applications. This device is housed in the SOT-723 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

Machine Model;

u 200 V

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Emitter-Base Voltage

5.0

Vdc

Collector Current − Continuous

100

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation (Note 1)

260

mW

Junction Temperature

150

°C

Storage Temperature Range

−55 ~ + 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

1

2

3

Device

Package

Shipping

−723

(Pb−Free)

8000/Tape & Reel

L2SC5658

QM3T5G SOT