PA677TB_15 datasheet(4/8 Pages) RENESAS

Part #	PA677TB

Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

4 / 8 page

Data Sheet G16598EJ1V0DS

2

µµµµPA677TB

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 20.0 V, VGS = 0 V

1.0

µA

Gate Leakage Current

IGSS

VGS =

±12.0 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10.0 V, ID = 1.0 mA

0.5

1.0

1.5

V

Forward Transfer Admittance

Note

| yfs |VDS = 10.0 V, ID = 0.30 A

0.25

0.75

S

Drain to Source On-state Resistance

Note

RDS(on)1

VGS = 4.5 V, ID = 0.30 A

0.38

0.57

Ω

RDS(on)2

VGS = 4.0 V, ID = 0.30 A

0.41

0.60

Ω

RDS(on)3

VGS = 2.5 V, ID = 0.15 A

0.60

0.88

Ω

Input Capacitance

Ciss

VDS = 10.0 V

28

pF

Output Capacitance

Coss

VGS = 0 V

11

pF

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

7

pF

Turn-on Delay Time

td(on)

VDD = 10.0 V, ID = 0.30 A

20

ns

Rise Time

tr

VGS = 4.0 V

51

ns

Turn-off Delay Time

td(off)

RG = 10

Ω

94

ns

Fall Time

tf

87

ns

Body Diode Forward Voltage

Note

VF(S-D)

IF = 0.35 A, VGS = 0 V

0.84

V

Note Pulsed PW

≤350

µs, Duty Cycle≤2%

TEST CIRCUIT SWITCHING TIME

PG.

RG

0

VGS

D.U.T.

RL

VDD

τ = 1 s

µ

Duty Cycle

≤ 1%

τ

VGS

Wave Form

VDS

Wave Form

VGS

VDS

10%

0

90%

VGS

VDS

ton

toff

td(on)

tr

td(off)

tf

10%

Similar Part No. - PA677TB_15

Manufacturer	Part #	Datasheet	Description
NEC	PA671WG	585Kb / 2P	NEC Professional Installation Projector
Renesas Technology Corp	PA678TB	196Kb / 8P	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Technology Corp	PA679TB	278Kb / 12P	N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

More results

Similar Description - PA677TB_15

Manufacturer	Part #	Datasheet	Description
NEC	UPA2451	108Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1870	82Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA2450	75Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA620TT	67Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA677TB	58Kb / 6P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1806	64Kb / 6P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	UPA1874B	145Kb / 7P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Technology Corp	PA1900	197Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	2SK3576	202Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	2SK3664	273Kb / 8P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
	PA1857	209Kb / 10P	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

More results

PA677TB Datasheet(PDF) 4 Page - Renesas Technology Corp

PA677TB Datasheet(HTML) 4 Page - Renesas Technology Corp

Similar Part No. - PA677TB_15

Similar Description - PA677TB_15

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL