Electronic Components Datasheet Search |
|
PA2704GR Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
PA2704GR Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 6 page The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before final production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2002 MOS FIELD EFFECT TRANSISTOR µµµµPA2704GR SWITCHING N-CHANNEL POWER MOS FET PRELIMINARY PRODUCT INFORMATION Document No. G16304EJ1V0PM00 (1st edition) Date Published July 2002 NS CP(K) Printed in Japan DESCRIPTION The µPA2704GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-state resistance RDS(on)1 = 7.2 m Ω MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 11.2 m Ω MAX. (VGS = 4.5 V, ID = 7.0 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE µPA2704GR Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±14 A Drain Current (pulse) Note1 ID(pulse) ±56 A Total Power Dissipation (TA = 25°C) Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note3 IAS 14 A Single Avalanche Energy Note3 EAS 19.6 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 1200 mm 2 x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40 +0.10 –0.05 0.78 MAX. 0.8 0.5 ±0.2 5.37 MAX. 0.10 14 85 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
Similar Part No. - PA2704GR_15 |
|
Similar Description - PA2704GR_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |