The information contained in this document is being issued in advance of the production cycle for the

device. The parameters for the device may change before final production or NEC Corporation, at its own

discretion, may withdraw the device prior to its production.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

2002

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

PRELIMINARY PRODUCT INFORMATION

Document No. G16304EJ1V0PM00 (1st edition)

Date Published July 2002 NS CP(K)

Printed in Japan

DESCRIPTION

The

designed for DC/DC converters and power management

applications of notebook computers.

FEATURES

• Low on-state resistance

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA2704GR

Power SOP8

30

V

±20

V

Drain Current (DC)

±14

A

Drain Current (pulse)

Note1

±56

A

Note2

2.0

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Single Avalanche Current

Note3

14

A

Single Avalanche Energy

Note3

19.6

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm

Ω, L = 100

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is extemally required if a voltage exceeding

the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 MAX.

0.8

0.5 ±0.2

5.37 MAX.

0.10

14

85

1, 2, 3

; Source

4

; Gate

5, 6, 7, 8 ; Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain