PA1902_15 datasheet(6/8 Pages) RENESAS

Part #	PA1902

Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet G16634EJ1V0DS

4

µ PA1902

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

0

5

10

15

20

25

30

0

0.1

0.2

0.3

0.4

0.5

0.6

Pulsed

VGS = 10 V

4.5 V

VDS - Drain to Source Voltage - V

0.0001

0.001

0.01

0.1

1

10

100

01

2

3

4

VDS = 10 V

Pulsed

TA = 125°C

75°C

25°C

−25°C

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

1.4

1.9

2.4

-50

0

50

100

150

VDS = 10 V

ID = 1.0 mA

Tch - Channel Temperature -

°C

0.1

1

10

100

0.01

0.1

1

10

100

VDS = 10 V

Pulsed

TA = −25°C

25°C

75°C

125°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

0

20

40

60

0.01

0.1

1

10

100

VGS = 10 V

Pulsed

TA = 125°C

75°C

25°C

−25°C

ID - Drain Current - A

0

20

40

60

0.01

0.1

1

10

100

VGS = 4.5 V

Pulsed

TA = 125°C

75°C

25°C

−25°C

ID - Drain Current - A

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PA1902 Datasheet(PDF) 6 Page - Renesas Technology Corp

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