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PA1857 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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PA1857 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2001 MOS FIELD EFFECT TRANSISTOR µµµµPA1857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G15060EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. DESCRIPTION The µPA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Low on-state resistance RDS(on)1 = 67.0 m Ω MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 86.0 m Ω MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)3 = 95.0 m Ω MAX. (VGS = 4.0 V, ID = 2.0 A) • Low Ciss Ciss = 580 pF TYP. • Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE µ PA1857GR-9JG Power TSSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TA = 25°C) ID(DC) ±3.8 A Drain Current (pulse) Note1 ID(pulse) ±15.2 A Total Power Dissipation(1unit) Note2 PT1 1.0 W Total Power Dissipation(2unit) Note2 PT2 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS 3.8 A Single Avalanche Energy Note3 EAS 33 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. TA = 25°C Mounted on ceramic substrate of 50 cm 2 x 1.1 mm 3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 14 85 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 0.1 0.8 MAX. 3.15 ±0.15 3.0 ±0.1 0.65 0.10 M 0.27 +0.03 –0.08 0.25 0.5 3 °+5° –3 ° 0.6 +0.15 –0.1 1.2 MAX. 0.1±0.05 1.0±0.05 1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2 EQUIVALENT CIRCUIT Source2 Body Diode Gate Protection Diode Gate2 Drain2 Source1 Body Diode Gate Protection Diode Gate1 Drain1 |
Similar Part No. - PA1857_15 |
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Similar Description - PA1857_15 |
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