PA1857_15 datasheet(3/10 Pages) RENESAS

Part #	PA1857

Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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©

2001

MOS FIELD EFFECT TRANSISTOR

µµµµPA1857

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

G15060EJ2V0DS00 (2nd edition)

Date Published

April 2001 NS CP(K)

Printed in Japan

The mark 5 shows major revised points.

DESCRIPTION

The

µPA1857 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

• Low on-state resistance

RDS(on)1 = 67.0 m

Ω MAX. (VGS = 10 V, ID = 2.0 A)

RDS(on)2 = 86.0 m

Ω MAX. (VGS = 4.5 V, ID = 2.0 A)

RDS(on)3 = 95.0 m

Ω MAX. (VGS = 4.0 V, ID = 2.0 A)

• Low Ciss Ciss = 580 pF TYP.

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1857GR-9JG

Power TSSOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TA = 25°C)

ID(DC)

±3.8

A

Drain Current (pulse)

Note1

ID(pulse)

±15.2

A

Total Power Dissipation(1unit)

Note2

PT1

1.0

W

Total Power Dissipation(2unit)

Note2

PT2

1.7

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note3

IAS

3.8

A

Single Avalanche Energy

Note3

EAS

33

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. TA = 25°C Mounted on ceramic substrate of 50 cm

2 x 1.1 mm

3. Starting Tch = 25°C, VDD = 30 V, RG = 25

Ω, VGS = 20 → 0 V

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

14

85

6.4 ±0.2

4.4 ±0.1

1.0 ±0.2

0.1

0.8 MAX.

3.15 ±0.15

3.0 ±0.1

0.65

0.10 M

0.27

+0.03

–0.08

0.25

0.5

3

°+5°

–3

°

0.6

+0.15

–0.1

1.2 MAX.

0.1±0.05

1.0±0.05

1

:Drain1

2, 3 :Source1

4

:Gate1

5

:Gate2

6, 7 :Source2

8

:Drain2

EQUIVALENT CIRCUIT

Source2

Body

Diode

Gate

Protection

Diode

Gate2

Drain2

Source1

Body

Diode

Gate

Protection

Diode

Gate1

Drain1

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