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PA1857 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # PA1857
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PA1857 Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet G15060EJ2V0DS
4
µµµµPA1857
1
10
100
0.1
VDS = 10 V
ID - Drain Current - A
1
10
0.10
0.010
0.01
100
75˚C
125˚C
25˚C
TA =
−25˚C
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
ID - Drain Current - A
TA = 125˚C
75˚C
−25˚C
25˚C
VGS = 4.0 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
ID - Drain Current - A
TA = 125˚C
75˚C
−25˚C
25˚C
VGS = 4.5 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
ID - Drain Current - A
TA = 125˚C
75˚C
−25˚C
25˚C
VGS = 10 V
0
40
80
120
160
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
ID = 2.0 A
−50
0
50
100
150
10
30
50
70
90
110
130
VGS = 4.0 V
4.5 V
10 V
0
0
25
50
75
100
125
150
2468
10
12
14
16
18
20
VGS - Gate to Source Voltage - V
ID = 2.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE


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