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MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. G19282EJ1V0DS00 (1st edition)

Date Published May 2008 NS

Printed in Japan

2008

DESCRIPTION

The

μ PA2755AGR is Dual N-channel MOS Field Effect

Transistor designed for DC/DC converters and power

management applications of notebook computers.

FEATURES

• Dual chip type

• Low on-state resistance

• Low input capacitance

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

°C, All terminals are connected.)

30

V

±20

V

°C)

±8.0

A

Drain Current (pulse)

Note1

±32

A

Total Power Dissipation (1 unit)

Note2

1.7

W

Total Power Dissipation (2 units)

Note2

2.0

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Single Avalanche Current

Note3

8

A

Single Avalanche Energy

Note3

6.4

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 2000 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 MAX.

0.8

0.5 ±0.2

5.37 MAX.

0.10

14

85

1

: Source 1

2

: Gate 1

7, 8: Drain 1

3

: Source 2

4

: Gate 2

5, 6: Drain 2

EQUIVALENT CIRCUIT

(1/2 circuit)

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain