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DCR820N55 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DCR820N55 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 11 page SEMICONDUCTOR DCR820N65 4/11 www.dynexsemi.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES 0 500 1000 1500 2000 2500 3000 3500 1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage, VT - (V) min 25°C 25°C max 125°C min 125°C max Fig.2 Maximum & minimum on-state characteristics VTM EQUATION Where A = 0.874878 B = 0.001945 VTM = A + Bln (IT) + C.IT+D.IT C = 0.000808 D = 0.013372 these values are valid for Tj = 125°C for IT 300A to 3500A |
Similar Part No. - DCR820N55 |
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Similar Description - DCR820N55 |
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