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2SK3434 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3434 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page © 1999, 2001 MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14603EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark 5 shows major revised points. DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 m Ω MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31 m Ω MAX. (VGS = 4.0 V, ID = 24 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A Drain Current (pulse) Note1 ID(pulse) ±120 A Total Power Dissipation (TC = 25°C) PT 56 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 28 A Single Avalanche Energy Note2 EAS 78 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262 2SK3434-ZJ TO-263 2SK3434-Z TO-220SMD Note Note TO-220SMD package is produced only in Japan. (TO-220AB) (TO-262) (TO-263, TO-220SMD) |
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