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2SK3424 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SK3424
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3424 Datasheet(HTML) 3 Page - Renesas Technology Corp

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©
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3424
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14640EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3424 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 11.5 m
Ω MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (Pulse)
Note
ID(pulse)
±192
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note PW
≤ 10
µs, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3424
TO-220AB
2SK3424-ZK
TO-263(MP-25ZK)
2SK3424-ZJ
TO-263(MP-25ZJ)


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