Electronic Components Datasheet Search |
|
2SK3408 Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
2SK3408 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. 2000 MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D15016EJ4V0DS00 (4th edition) Date Published May 2003 NS CP(K) Printed in Japan The mark 5 5 5 5 shows major revised points. DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4.0 V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES • Can be driven by a 4.0 V power source • Low on-state resistance RDS(on)1 = 195 m Ω MAX. (VGS = 10.0 V, ID = 0.5 A) RDS(on)2 = 250 m Ω MAX. (VGS = 4.5 V, ID = 0.5 A) RDS(on)3 = 260 m Ω MAX. (VGS = 4.0 V, ID = 0.5 A) • Built-in G-S protection diode against ESD. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3408 SC-96 Mini Mold (Thin Type) Marking: XF ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 43 ±5 V Drain to Gate Voltage (VGS = 0 V) VDGS 43 ±5 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TA = 25°C) ID(DC) ±1.0 A Drain Current (pulse) Note1 ID(pulse) ±4.0 A Total Power Dissipation (TA = 25°C) PT1 0.20 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on 250 mm 2 x 35 µm copper pad connected to drain electrode in 2500 mm2 x 1.6 mm FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 –0.06 0.95 1 2 3 1.9 2.9 ±0.2 0.4 +0.1 –0.05 0.95 1: Gate 2: Source 3: Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain 5 5 5 5 5 5 5 5 |
Similar Part No. - 2SK3408_15 |
|
Similar Description - 2SK3408_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |