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2SK3408 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SK3408
Description  MOS FIELD EFFECT TRANSISTOR
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3408 Datasheet(HTML) 3 Page - Renesas Technology Corp

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15016EJ4V0DS00 (4th edition)
Date Published May 2003 NS CP(K)
Printed in Japan
The mark 5
5
5
5 shows major revised points.
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4.0 V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4.0 V power source
• Low on-state resistance
RDS(on)1 = 195 m
Ω MAX. (VGS = 10.0 V, ID = 0.5 A)
RDS(on)2 = 250 m
Ω MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 m
Ω MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3408
SC-96 Mini Mold (Thin Type)
Marking: XF
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43 ±5
V
Drain to Gate Voltage (VGS = 0 V)
VDGS
43 ±5
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse)
Note1
ID(pulse)
±4.0
A
Total Power Dissipation (TA = 25°C)
PT1
0.20
W
Total Power Dissipation (TA = 25°C)
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW
≤ 10
µs, Duty Cycle ≤ 1%
2. Mounted on 250 mm
2 x 35
µm copper pad connected to drain electrode in 2500 mm2 x 1.6 mm FR-4
board, t
≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
1: Gate
2: Source
3: Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
5
5
5
5
5
5
5
5


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