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2SK3355 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SK3355
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3355 Datasheet(HTML) 3 Page - Renesas Technology Corp

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©
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14132EJ5V0DS00 (5th edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ! shows major revised points.
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.8 m
Ω MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.8 m
Ω MAX. (VGS = 4.0 V, ID = 42 A)
• Low Ciss: Ciss = 9800 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
75
A
Single Avalanche Energy
Note2
EAS
562
mJ
Notes 1. PW
≤ 10
µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3355
TO-220AB
2SK3355-S
TO-262
2SK3355-ZJ
TO-263
2SK3355-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)


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