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KDV239E Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KDV239E Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2000. 3. 7 1/2 SEMICONDUCTOR TECHNICAL DATA KDV239E Revision No : 0 VCO FOR UHF RADIO. FEATURES Ultra Low Series Resistance : rS=0.44 (Typ.) Small Package. (ESC Package) MAXIMUM RATING (Ta=25 ) ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 D C 1 2 E 1. ANODE 2. CATHODE F 0.13 0.05 F +_ +_ +_ +_ +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25 ) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type Name Marking J U CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 15 V Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1 A 15 - - V Reverse Current IR VR=15V - - 3 nA Capacitance C2V VR=2V, f=1MHz 3.8 4.25 4.7 pF C10V VR=10V, f=1MHz 1.5 1.75 2.0 Capacitance Ratio K C2V/C10V, f=1MHz 2.0 2.4 - Series Resistance rS VR=1V, f=470MHz - 0.44 0.6 |
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Similar Description - KDV239E |
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