TQP9321

High Efficiency 0.5 W Small Cell PA

Datasheet: Rev. H 04-10-15

- 2 of 7 -

Disclaimer: Subject to change without notice

© 2015 TriQuint Semiconductor, Inc.

www.triquint.com / www.qorvo.com

Absolute Maximum Ratings

Parameter

Rating

Storage Temperature

 °C

+6 V

+10 dBm

Operation of this device outside the parameter ranges given

above may cause permanent damage.

Recommended Operating Conditions

Parameter

Min

Typ

Max Units

+5

V

25

+85

°C

+175

°C

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted:

Parameter

Conditions

Min

Typ

Max

Units

Operational Frequency Range

1800

2170

MHz

Output Channel Power

+27

dBm

Gain

1805 – 1880

28.1

30

dB

1930 – 1990

27.1

29

dB

2110 – 2170

27.1

29

30.8

dB

Gain Temperature Coefficient

-0.024

dB/°C

ACLR Uncorrected

See note 1

-35

dBc

ACLR Corrected

See note 1

-50

dBc

Power Added Efficiency

1805 – 1880 MHz, See note 1

29

%

1930 – 1990

28

%

2110 – 2170 MHz, See note 1

27

%

Output P3dB

1805 – 1880 MHz

+33.6

+34.7

dBm

1930 – 1990

+33.6

+34.7

dBm

2110 – 2170 MHz

+33.6

+34.7

dBm

P3dB Temperature Coefficient

-0.008

dBm/°C

Noise Figure

3.5

dB

90

110

136

mA

2

mA

Pout = +27 dBm

340

mA

VSWR Survivability

Pout = +26 dBm

Signal : WCDMA 1C, PAR = 8 dB

10:1

–

Module (junction to case)

27

°C/W

Notes:

1.

Using LTE signal, 20 MHz/Carrier, IBW = 18.02 MHz, PAR 7.5 dB, Pout = +27 dBm.

2. Items in min/max columns in bold at

guaranteed by production test at 2.14 GHz.

3. Items in min/max columns that are not a bold font are guaranteed by design characterization.