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TQP9309 Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TQP9309
Description  High Efficiency 0.5W Small Cell Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TQP9309 Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Recommended Operating Conditions
Parameter
Min
Typ
Max Units
VDD
5
V
TAMB
40
25
+85
°C
Tj for >106 hours MTTF
+190
°C
Notes:
1. Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
40 to 150°C
Supply Voltage (VCC)
6V
RF Input Power,
CW, 50Ω, T=25°C
10dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted:
VCC =+5V, Vpd = +5V, Temp= +25°C, Test Frequency : 900MHz
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
700
960
MHz
Output Channel Power
+28
dBm
Gain
700 - 800MHz
28.6
31
dB
800 - 960MHz
29.6
32
33.3
dB
Gain Temperature Coefficient
-0.026
dB/°C
ACLR Uncorrected
See note 1
-37
dBc
ACLR Corrected
See note 1
-50
dBc
Power Added Efficiency
See note 1
27
%
Noise Figure
4
dB
Output P3dB
+33.9
+35
dBm
P3dB Temperature Coefficient
-0.005
dBm/°C
Supply Voltage
5
V
Quiescent Current, ICQ
85
100
127
mA
Operational Current, Icc
380
mA
VSWR Survivability
Pout = +26 dBm
Signal : WCDMA 1C, PAR = 8 dB
7:1
Thermal Resistance, θjc
Module (junction to case)
28.3
°C/W
Notes:
1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm
2. Items in min/max columns in bold at guaranteed by production test at 900 MHz
3. Items in min/max columns that are not a bold font are guaranteed by design characterization.
Datasheet: Rev D 01-30-15
- 2 of 8 -
Disclaimer: Subject to change
© 2015 TriQuint
www.triquint.com


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