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RQJ0301HGDQS Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RQJ0301HGDQS
Description  Silicon P Channel MOS FET Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0301HGDQS Datasheet(HTML) 3 Page - Renesas Technology Corp

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Rev.3.00 Jun 05, 2006 page 1 of 6
RQJ0301HGDQS
Silicon P Channel MOS FET
Power Switching
REJ03G1265-0300
Rev.3.00
Jun 05, 2006
Features
• Low on-resistance
RDS(on) = 38 m
Ω typ (V
GS = –10 V, ID = –2.6 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
)
R
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
D
2, 4
G
1
S
3
Note:
Marking is “HG”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
+10 / –20
V
Drain current
ID
–5.2
A
Drain peak current
ID (pulse)
Note1
–7.6
A
Body - drain diode reverse drain current
IDR
–5.2
A
Channel dissipation
Pch
Note2
1.5
W
Channel dissipation
Pch (pulse)
Note1
5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)


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