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RQJ0301HGDQS Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RQJ0301HGDQS Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page Rev.3.00 Jun 05, 2006 page 1 of 6 RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features • Low on-resistance RDS(on) = 38 m Ω typ (V GS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK ) R 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 D 2, 4 G 1 S 3 Note: Marking is “HG”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS +10 / –20 V Drain current ID –5.2 A Drain peak current ID (pulse) Note1 –7.6 A Body - drain diode reverse drain current IDR –5.2 A Channel dissipation Pch Note2 1.5 W Channel dissipation Pch (pulse) Note1 5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) |
Similar Part No. - RQJ0301HGDQS_15 |
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Similar Description - RQJ0301HGDQS_15 |
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