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RQJ0301HGDQS Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RQJ0301HGDQS Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page  RQJ0301HGDQS Rev.3.00 Jun 05, 2006 page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS +10 — — V IG = +100 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –20 — — V IG = –100 µA, VDS = 0 Gate to source leak current IGSS — — +10 µA VGS = +8 V, VDS = 0 Gate to source leak current IGSS — — –10 µA VGS = –16 V, VDS = 0 Drain to source leak current IDSS — — –1 µA VDS = –30 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA RDS(on) — 38 48 m Ω ID = –2.6 A, VGS = –10 V Note3 Drain to source on state resistance RDS(on) — 56 79 m Ω ID = –2.6 A, VGS = –4.5 V Note3 Forward transfer admittance |yfs| 4.1 6.8 — S ID = –2.6 A, VDS = –10 V Note3 Input capacitance Ciss — 845 — pF Output capacitance Coss — 153 — pF Reverse transfer capacitance Crss — 118 — pF VDS = –10 V, VGS = 0, f = 1 MHz Turn - on delay time td(on) — 22 — ns Rise time tr — 41 — ns Turn - off delay time td(off) — 50 — ns Fall time tf — 6.8 — ns ID = –1 A, VGS = –10 V, RL = 10 Ω, Rg = 4.7 Ω Total gate charge Qg — 18 — nC Gate to source charge Qgs — 1.6 — nC Gate to drain charge Qgd — 6.0 — nC VDD = -10 V, VGS = -10 V, ID = –5.2 A Body - drain diode forward voltage VDF — –0.8 — V IF = –1.5 A, VGS = 0 Note3 Notes: 3. Pulse test |
Similar Part No. - RQJ0301HGDQS_15 |
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Similar Description - RQJ0301HGDQS_15 |
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