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RJM0306JSP Datasheet(PDF) 8 Page - Renesas Technology Corp |
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RJM0306JSP Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 12 page  RJM0306JSP Preliminary REJ03G1571-0101 Rev.1.01 Page 8 of 11 May 28, 2010 MOS3, 4 (Pch) 0 –10 –20 –30 –40 –50 0 0 –4 –8 –12 –16 –20 246 8 10 Gate Charge Qg (nc) Dynamic Input Characteristics 0 –0.4 –0.8 –1.2 –1.6 –2.0 –10 –5 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating VGS = 0 V, 5 V –5 V Pulse Test –10 V Avalanche Test Circuit Avalanche Waveform D. U. T Rg IAP Monitor VDS Monitor VDD 50 Ω Vin –15 V 0 ID VDS IAP V(BR)DSS L VDD EAR = L • I AP 2 • 2 1 VDSS VDSS – VDD 2 1.5 1 0.5 25 50 75 100 125 150 0 L = 100 μH VDD = –15 V duty < 0.1 % Rg ≥ 50 Ω ID = –3.5 A VDS VGS VDD = –25 V –10 V –5 V VDD = –25 V –10 V –5 V |
Similar Part No. - RJM0306JSP_15 |
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Similar Description - RJM0306JSP_15 |
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