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ST2100C Datasheet(PDF) 2 Page - International Rectifier |
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ST2100C Datasheet(HTML) 2 Page - International Rectifier |
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2 / 6 page  ST2100C..R Series 2222222222222 12 D-414 Voltage V DRM /V RRM , max. repetitive V RSM , maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T C = 125°C V V mA 30 3000 3100 32 3200 3300 34 3400 3500 36 3600 3700 38 3800 3900 40 4000 4100 42 4200 4300 ELECTRICAL SPECIFICATIONS Voltage Ratings I T(AV) Max. average on-state current 1770 (1150) A @ Case temperature 80 °C I T(AV) Max. average on-state current 2090 (940) A @ Heatsink temperature 55 (85) °C I T(RMS) Max. RMS on-state current 3850 A DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one-cycle No voltage non-repetitive surge current reapplied 50% V RRM reapplied Sinusoidal half wave, I2t Maximum I2t for fusing No voltage Initial T C = 125°C reapplied 50% V RRM reapplied V T(TO) Max. value of threshold voltage 1.03 V T J = T J max. r t Max. value of on-state slope resistance V TM Max. on-state voltage 1.875 V I pk = 2900A, T C = 25°C I L Typical latching current 300 mA T J = 25°C, V D = 5V Parameter ST2100C..R Units Conditions On-state Conduction A KA 2s 0.32 T J = T J max. m Ω 180° conduction, half sine wave double side (single side [anode side]) cooled t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 36250 38000 29000 30350 6570 5990 4205 3820 Parameter ST2100C..R Units Conditions 150 (300) A/µs µs t q Typical turn-off time 500 di/dt Max. repetitive 50Hz (no repetitive) From 67% V DRM to 1000A gate drive 20V, 10 Ω, t r = 0.5µs rate of rise of turned-on current T J = T J max. Gate drive 30V, 15 Ω, V d = 67% V DRM , T J = 25°C Rise time 0.5µs I T = 1000A, t p = 1ms, T J = T J max, V RM = 50V, dI RR /dt = 2A/µs, V DR = 67% V DRM , dV DR /dt = 8V/µs linear Switching t d Maximum delay time 2.5 ST2100C..R 250 Next Data Sheet Index Previous Datasheet To Order |
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