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HAT2058R Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # HAT2058R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
Download  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2058R Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAT2058R
Preliminary
REJ03G1174-0300 Rev.3.00 Aug 25, 2009
Page 3 of 7
Main Characteristics
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Note 6:
When using the glass epoxy board
(FR4 40
× 40 × 1.6 mm)
4.0
0
1.0
2.0
3.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
1
3
30
300
10
100
1000
20
0
4
8
12
16
02
4
6
8
10
4 V
VGS = 2 V
10
0
2
4
6
8
0
1
23
45
25°C
Operation in
this area is
limited by RDS (on)
Pulse Test
VDS = 10 V
Pulse Test
Test Condition:
When using the glass epoxy board
(FR4 40
× 40 × 1.6 mm), PW ≤ 10 s
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
0
0.2
0.4
0.6
0.8
0
4
8
12
16
20
1 A
2 A
ID = 4 A
0.1 0.2
0.5
1
2
10
520
50
0.5
0.2
0.1
0.02
0.05
0.01
Pulse Test
DC
Operation
(PW
≤ 10
s)
PW
=
10
ms
Note
6
1 ms
10
μs
100
μs
6 V
–25°C
Tc = 75°C
1 Drive
Operation
10 V
VGS = 4 V
Pulse Test
10 V
Ta = 25°C
1 shot Pulse
1 Drive Operation


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