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STT3808NE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT3808NE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente STT3808NE 6A , 20V , RDS(ON) 20 mΩ Ω Ω Ω N-Channel Enhancement Mode Mos.FET 18-Oct-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate- Source Threshold Voltage VGS(th) 0.4 - - V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS= ±8V - - 1 VDS=16V, VGS=0 V Zero Gate Voltage Drain Current IDSS - - 30 µA VDS=16V, VGS=0 V, TJ= 85°C On-State Drain Current ID(on) 10 - - A VDS =5V, VGS=4.5V - - 20 VGS=4.5V, ID=6A Drain-Source On-Resistance RDS(ON) - - 28 m VGS=2.5V, ID=5A Forward Transconductance gfs - 10 - S VDS=15V, ID=6A Diode Forward Voltage VSD - 0.7 - V IS=1A, VGS=0V Dynamic Total Gate Charge Qg - 13.5 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 5.4 - nC VDS=10V, VGS=4.5V, ID=6A Turn-on Delay Time Td(on) - 6 - Rise Time Tr - 12 - Turn-off Delay Time Td(off) - 65 - Fall Time Tf - 35 - nS VDD=10V, VGEN=4.5V, RGEN=6 , RL=10 , ID=1A Input Capacitance Ciss - 680 - Output Capacitance Coss - 144 - Reverse Transfer Capacitance Crss - 137 - pF VDS = 10 V, VGS = 0 V, f = 1 MHz Notes 1. Pulse test:PW≦300µs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. |
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