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STT3470N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3470N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 30-Dec-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extend battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA= 25°C ID 2.2 A Pulsed Drain Current 2 IDM ±10 A Continuous Source Current (Diode Conduction) 1 IS 1.1 A Power Dissipation 1 TA= 25°C PD 2 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Parameter Symbol Typ. Max. Unit Maximum Junction to Ambient 1 t ≦ 10 sec RJA 93 110 °C / W Steady State 130 150 Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 D G D D D S |
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