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STT3457P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3457P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 06-Jan-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA= 25°C ID -4 A TA= 70°C -3.2 Pulsed Drain Current 2 IDM -20 A Continuous Source Current (Diode Conduction) 1 IS -1.7 A Power Dissipation 1 TA= 25°C PD 2 W TA= 70°C 1.3 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RJA 62.5 °C / W Steady State 110 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 23 4 5 6 D G DD D S |
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