H5N2505DL_15 datasheet(4/10 Pages) RENESAS

Part #	H5N2505DL

Description	Silicon N Channel MOS FET High Speed Power Switching

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

4 / 10 page

H5N2505DL, H5N2505DS

Rev.3.00 Oct 16, 2006 page 2 of 7

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

250

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 250 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

2.0

3.3

—

S

ID = 2.5 A, VDS = 10 V

Note 4

Static drain to source on state resistance

RDS (on)

—

0.68

0.89

Ω

ID = 2.5 A, VGS = 10 V

Note 4

Input capacitance

Ciss

—

300

—

pF

Output capacitance

Coss

—

42

—

pF

Reverse transfer capacitance

Crss

—

11

—

pF

VDS = 25 V, VGS = 0,

f = 1 MHz

Total gate charge

Qg

—

11

—

nC

Gate to source charge

Qgs

—

2

—

nC

Gate to drain charge

Qgd

—

5

—

nC

VDD = 200 V, VGS = 10 V,

ID = 5 A

Turn-on delay time

td (on)

—

18

—

ns

Rise time

tr

—

18

—

ns

Turn-off delay time

td (off)

—

44

—

ns

Fall time

tf

—

11

—

ns

VDD

≅ 125 V, ID = 2.5 A,

VGS = 10 V

RL = 50

Ω, Rg = 10 Ω

Body-drain diode forward voltage

VDF

—

1.0

1.5

V

IF = 5 A, VGS = 0

Note 4

Body-drain diode reverse recovery time

trr

—

100

—

ns

Body-drain diode reverse recovery charge

Qrr

—

0.32

—

µC

IF = 5 A, VGS = 0

diF/dt = 100 A/

µs

Note:

4. Pulse test

Similar Part No. - H5N2505DL_15

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	H5N2505DL-E	118Kb / 8P	Silicon N Channel MOS FET High Speed Power Switching

More results

Similar Description - H5N2505DL_15

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	H7N0608LD	118Kb / 12P	Silicon N Channel MOS FET High Speed Power Switching
	H5N1503P	81Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6015DPK	107Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H7N0310LD	131Kb / 14P	Silicon N Channel MOS FET High Speed Power Switching
	2SK2788	82Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK5013DPE	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJL5014DPK	89Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H5N5006DL	113Kb / 10P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005LD	145Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching
	HAT2179R	126Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1005DL	139Kb / 11P	Silicon N Channel MOS FET High Speed Power Switching

More results

H5N2505DL Datasheet(PDF) 4 Page - Renesas Technology Corp

H5N2505DL Datasheet(HTML) 4 Page - Renesas Technology Corp

Similar Part No. - H5N2505DL_15

Similar Description - H5N2505DL_15

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL