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SST3585S Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SST3585S Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 7 page Elektronische Bauelemente SST3585S 3.5A, 20V, RDS(ON) 75mΩ Ω Ω Ω -2.5A, -20V, RDS(ON) 160mΩ Ω Ω Ω N And P-Channel Enhancement Mode Power MOSFET 25-Mar-2014 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode N-Ch - - 1.2 IS=1.2A, VGS=0 Forward On Voltage 1 P-Ch VSD - - -1.2 V IS= -1.2A, VGS=0 N-Ch - 16 - IS=3A, VGS=0 ,dI/dt=100A/µs Reverse Recovery Time P-Ch TRR - 20 - ns IS= -2A, VGS=0 ,dI/dt=100A/µs N-Ch - 8 - IS=3A, VGS=0 ,dI/dt=100A/µs Reverse Recovery Charge P-Ch Qrr - 15 - nC IS= -2A, VGS=0 ,dI/dt=100A/µs Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300µs, duty cycle≦2%. 3 Surface mounted on 1 in 2 copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. |
Similar Part No. - SST3585S_15 |
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Similar Description - SST3585S_15 |
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