SST3585S_15 datasheet(3/7 Pages) SECOS

Part #	SST3585S

Description	N And P-Channel Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SST3585S

3.5A, 20V, RDS(ON) 75mΩ

Ω

-2.5A, -20V, RDS(ON) 160mΩ

Ω

N And P-Channel Enhancement Mode Power MOSFET

25-Mar-2014 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Source-Drain Diode

N-Ch

-

1.2

IS=1.2A, VGS=0

Forward On Voltage

1

P-Ch

VSD

-

-1.2

V

IS= -1.2A, VGS=0

N-Ch

-

16

-

IS=3A, VGS=0 ,dI/dt=100A/µs

Reverse Recovery Time

P-Ch

TRR

-

20

-

ns

IS= -2A, VGS=0 ,dI/dt=100A/µs

N-Ch

-

8

-

IS=3A, VGS=0 ,dI/dt=100A/µs

Reverse Recovery Charge

P-Ch

Qrr

-

15

-

nC

IS= -2A, VGS=0 ,dI/dt=100A/µs

Notes:

1

Pulse width limited by Max. junction temperature.

2

Pulse width≦300µs, duty cycle≦2%.

3

Surface mounted on 1 in

2 copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.

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SST3585S Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH

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