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2SK3212 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SK3212
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3212 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SK3212
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
Note1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAP
Note3
10
A
Avalanche energy
EAR
Note3
10
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
100
130
m
ID = 5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
130
170
m
ID = 5 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
4.5
7.5
S
ID = 5 A, VDS = 10 V
Note4
Input capacitance
Ciss
420
pF
Output capacitance
Coss
185
pF
Reverse transfer capacitance
Crss
100
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
12
ns
Rise time
tr
60
ns
Turn-off delay time
td(off)
105
ns
Fall time
tf
70
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body–drain diode forward voltage
VDF
0.9
V
IF = 10 A, VGS = 0
Body–drain diode reverse recovery
time
trr
90
ns
IF = 10 A, VGS = 0
diF/ dt = 50 A/
µs
Note:
4. Pulse test


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