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IRLI630G Datasheet(PDF) 2 Page - International Rectifier

Part # IRLI630G
Description  Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLI630G Datasheet(HTML) 2 Page - International Rectifier

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IRLI630G
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
2.0
V
TJ = 25°C, IS = 6.2A, VGS = 0V
trr
Reverse Recovery Time
–––
230
350
ns
TJ = 25°C, IF = 9.0A
Qrr
Reverse RecoveryCharge
–––
1.7
2.6
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25Ω, IAS = 6.2A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.27
–––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
0.40
VGS = 5.0V, ID = 3.7A
–––
–––
0.50
VGS = 4.0V, ID = 3.1A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
4.8
–––
–––
S
VDS = 50V, ID = 5.4A
–––
–––
25
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 10V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -10V
Qg
Total Gate Charge
–––
–––
40
ID = 9.0A
Qgs
Gate-to-Source Charge
–––
–––
5.5
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
24
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
8.0
–––
VDD = 100V
tr
Rise Time
–––
57
–––
ID = 9.0A
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 6.0Ω
tf
Fall Time
–––
33
–––
RD = 11Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1100 –––
VGS = 0V
Coss
Output Capacitance
–––
220
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
70
–––
ƒ = 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
25
–––
–––
6.2
A
ns
IDSS
Drain-to-Source Leakage Current
IGSS
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
nH
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
t=60s, ƒ=60Hz
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