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IRLI630G Datasheet(PDF) 1 Page - International Rectifier

Part # IRLI630G
Description  Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLI630G Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
3.6
RθJA
Junction-to-Ambient
––––
––––
65
IRLI630G
HEXFET® Power MOSFET
PD - 9.1236
Revision 0
VDSS = 200V
RDS(on) = 0.40
ID = 6.2A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 5.0V
6.2
ID @ TC = 100°C
Continuous Drain Current, VGS @ 5.0V
3.9
A
IDM
Pulsed Drain Current
25
PD @TC = 25°C
Power Dissipation
35
W
Linear Derating Factor
0.28
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
125
mJ
IAR
Avalanche Current
6.2
A
EAR
Repetitive Avalanche Energy
3.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications.
The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Description
°C/W
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