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IRHM2C50SE Datasheet(PDF) 3 Page - International Rectifier |
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IRHM2C50SE Datasheet(HTML) 3 Page - International Rectifier |
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3 / 4 page  Table 2. High Dose Rate 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter Min Typ Max Min Typ Max Units Test Conditions V DSS Drain-to-Source Voltage — — 480 — — 480 V Applied drain-to-source voltage during gamma-dot IPP — 6.4 — — 6.4 — A Peak radiation induced photo-current di/dt — — 16 — — 2.3 A/µsec Rate of rise of photo-current L1 20 — — 137 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects LET (Si) Fluence Range VDS Bias VGS Bias Parameter Typical Units Ion (MeV/mg/cm2) (ions/cm2) (µm) (V) (V) BVDSS 600 V Ni 28 1 x 105 ~35 480 -5 Radiation Performance of Rad Hard HEXFETs IRHM2C50SE, IRHM7C50SE Devices Radiation Characteristics Table 1. Low Dose Rate IRHM2C50SE 50K Rads (Si) Parameter IRHM7C50SE 100K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 600 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.5 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 50 µA VDS=0.8 x Max Rating, VGS=0V RDS(on)1 Static Drain-to-Source — 0.60 Ω VGS = 12V, ID =6.5A On-State Resistance One VSD Diode Forward Voltage — 1.62 V TC = 25°C, IS = 10.4A,VGS = 0V International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability.The hard- ness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 0.5 X 105 Rads(Si) and 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHM2C50SE and IRHM7C50SE, re- spectively. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. To Order Next Data Sheet Index Previous Datasheet |
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