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TAT7469 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TAT7469 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 11 page TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Datasheet: Rev I 6-11-14 - 2 of 11- Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Recommended Operating Conditions Parameter Min Typ Max Units Device Voltage (VDD) 5.0 V Device Voltage (IDD) 250 mA Case Temperature −40 +85 °C Tj for >106 hours MTTF +145 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Storage Temperature −55 to 150°C Device Voltage (VDD) +10 V Device Current (IDD) 400 mA(†) Operation of this device outside the parameter ranges given above may cause permanent damage. † Total current of both amplifiers, individual side cannot exceed half this value as an independent amplifier Electrical Specifications Test conditions unless otherwise noted: TAT7469-SC8-EB Evaluation board, VDD=+5 V, Heatsink Temp= +25°C, Zo = 75Ω , BIAS (J2) pin to GND Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1200 MHz Gain 50 To 1200 MHz 17.0 17.5 dB Gain Flatness(1) 50 To 1000 MHz ±0.75 dB Input Return Loss 50 To 1000 MHz 18 dB >1000 To 1200 MHz 17 Output Return Loss 50 To 1000 MHz 23 dB >1000 To 1200 MHz 17 Output IP2(3) Pout = +10 dBm/tone f1=225 MHz, f2=325 MHz 184 mA < IDD < 315 mA +70 +77 dBm Output IP3 +37 +38 dBm Noise Figure Freq.=1000 MHz 3.2 dB Device Current (IDD)(2) 184 250 315 mA Thermal Resistance, θjb Junction to base 13 °C/W Notes: 1. Flatness determined by deviation from a straight-line curve fit. 2. R3 and R4 are used to set the bias current, 10 kΩ. 3. Low side intermod at 200 MHz. |
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