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TAT7464-EB Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TAT7464-EB Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 6 page TAT7464 CATV 75 Ω pHEMT Dual RF Amplifier Data Sheet: Rev G 07-23-13 - 2 of 6 - Disclaimer: Subject to change without noticee © 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network® Specifications Absolute Maximum Ratings1 Parameter Rating Storage Temperature -65 oC to +85 oC Operating Temperature 10 oC to 85 oC Device Voltage +10 V Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units VDD 5 V IDD 210 mA TJ (for > 106 hours MTTF) 145 oC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions Electrical Specifications Test conditions unless otherwise noted: 25 ºC, +5 V VDD. Data includes the effects of the baluns and feeback in the application circuit. Parameter Conditions Min Typical Max Units Operational Frequency Range 50 2600 MHz Gain 11.7 dB Gain Flatness See Note 5. +/- 0.5 dB Noise Figure See Note 1. 4.4 dB Input Return Loss 15 dB Output Return Loss 10 dB Output P1dB 21 dBm Output IP3 See Note 2. 38 dBm Output IP2 See Note 2. 73 dBm XMOD See Note 2. -67 dBc CSO See Note 2. -83 dBc CTB See Note 2. -75 dBc Vsupply +5 V IDD 210 mA Thermal Resistance6 (jnt to case) θjc 26 oC/W Notes: 1. 50 to 1300 MHz 2. 33 dBmV/ch at output, 80 ch flat 3. Electrical specifications are measured at specified test conditions. 4. Specifications are not guaranteed over all recommended operating conditions. 5. Gain flatness defined as the gain deviation from a best-fit straight line. 6. Refer to Thermal Analysis Report. |
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