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TAT7464-EB Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TAT7464-EB
Description  CATV 75 HEMT Dual RF Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TAT7464-EB Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TAT7464
CATV 75 Ω pHEMT Dual RF Amplifier
Data Sheet: Rev G 07-23-13
- 2 of 6 -
Disclaimer: Subject to change without noticee
© 2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings1
Parameter
Rating
Storage Temperature
-65 oC to +85 oC
Operating Temperature
10 oC to 85 oC
Device Voltage
+10 V
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ Max Units
VDD
5
V
IDD
210
mA
TJ (for > 106 hours MTTF)
145
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, +5 V VDD. Data includes the effects of the baluns and feeback in the application circuit.
Parameter
Conditions
Min
Typical
Max
Units
Operational Frequency Range
50
2600
MHz
Gain
11.7
dB
Gain Flatness
See Note 5.
+/- 0.5
dB
Noise Figure
See Note 1.
4.4
dB
Input Return Loss
15
dB
Output Return Loss
10
dB
Output P1dB
21
dBm
Output IP3
See Note 2.
38
dBm
Output IP2
See Note 2.
73
dBm
XMOD
See Note 2.
-67
dBc
CSO
See Note 2.
-83
dBc
CTB
See Note 2.
-75
dBc
Vsupply
+5
V
IDD
210
mA
Thermal Resistance6 (jnt to case) θjc
26
oC/W
Notes:
1. 50 to 1300 MHz
2. 33 dBmV/ch at output, 80 ch flat
3. Electrical specifications are measured at specified test conditions.
4. Specifications are not guaranteed over all recommended operating conditions.
5. Gain flatness defined as the gain deviation from a best-fit straight line.
6. Refer to Thermal Analysis Report.


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